Invention Grant
- Patent Title: Memory device page buffer configuration and methods
- Patent Title (中): 内存设备页面缓冲区配置和方法
-
Application No.: US13572854Application Date: 2012-08-13
-
Publication No.: US08773921B2Publication Date: 2014-07-08
- Inventor: Paul D. Ruby , Violante Moschiano
- Applicant: Paul D. Ruby , Violante Moschiano
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: G11C7/10
- IPC: G11C7/10
Abstract:
Memory devices and methods are described that include communication circuitry between page buffers in a memory array. Examples include communication circuitry that provide status information of page buffers that are directly adjacent to a given page buffer. The exchanged information can be used to adjust a given page buffer to compensate for effects in directly adjacent data lines that are being operated at the same time.
Public/Granted literature
- US20120300549A1 MEMORY DEVICE PAGE BUFFER CONFIGURATION AND METHODS Public/Granted day:2012-11-29
Information query
