A surface emitting laser diode comprises a substrate, a lower reflector formed over the substrate, an active layer formed over the lower reflector, an upper reflector formed over the active layer, a current restrict structure including a current confinement region surrounded by insulation region. The current restrict structure is disposed in an upper reflector or between an active layer and the upper reflector, and an upper electrode formed over the upper reflector includes an aperture which corresponds to an emission region from which light is emitted in a first direction perpendicular to a surface of a substrate. The emission region and the current restrict structure including the current confinement region are selectively configured to obtain high single transverse mode, stabilized polarization direction, isotropic beam cross section and small divergence angle, while allowing the device to be manufactured with high yield rate.