Invention Grant
- Patent Title: Very low power MEMS microphone
- Patent Title (中): 超低功耗MEMS麦克风
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Application No.: US13162903Application Date: 2011-06-17
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Publication No.: US08774428B2Publication Date: 2014-07-08
- Inventor: Karine Jaar , Aleksey S. Khenkin
- Applicant: Karine Jaar , Aleksey S. Khenkin
- Applicant Address: US CA San Jose
- Assignee: Invensense, Inc.
- Current Assignee: Invensense, Inc.
- Current Assignee Address: US CA San Jose
- Agency: IPxLAW Group LLP
- Agent Maryam Imam
- Main IPC: H04R3/00
- IPC: H04R3/00 ; H04R19/00 ; H04R19/04

Abstract:
A MEMS microphone is capable of operating with less-than-one-volt bias voltage. An exemplary MEMS microphone can operate directly from a power rail (i.e., directly from VDD), i.e., without a DC-to-DC step-up voltage converter or other high bias voltage generator. The MEMS microphone has high mechanical and electrical sensitivity due, at least in part, to having high-compliance, i.e. low stiffness, springs and a relatively small gap between its diaphragm and its parallel conductive plate. In some embodiments, a diode-based voltage reference or a bandgap voltage reference supplies the bias voltage.
Public/Granted literature
- US20110311080A1 Very Low Power MEMS Microphone Public/Granted day:2011-12-22
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