Invention Grant
US08775108B2 Method and architecture for pre-bond probing of TSVs in 3D stacked integrated circuits 有权
三维堆叠集成电路中TSVs前缀探测的方法和架构

Method and architecture for pre-bond probing of TSVs in 3D stacked integrated circuits
Abstract:
On-chip test architecture and design-for-testability methods for pre-bond testing of TSVs are provided. In accordance with certain embodiments of the invention, a die level wrapper is provided including gated scan flops connected to one end of each TSV. The gated scan flops include a scan flop structure and a gated output. The gated output is controlled by a signal to cause the output of the gated scan flop to either be in a “floated state” or take the value stored in the flip-flop portion of the gated scan flop. The gated output of the gated scan flop can be used to enable resistance and capacitance measurements of pre-bonded TSVs.
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