Invention Grant
US08775719B2 NAND-based hybrid NVM design that integrates NAND and NOR in 1-die with parallel interface
失效
基于NAND的混合NVM设计,在单模并行接口中集成NAND和NOR
- Patent Title: NAND-based hybrid NVM design that integrates NAND and NOR in 1-die with parallel interface
- Patent Title (中): 基于NAND的混合NVM设计,在单模并行接口中集成NAND和NOR
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Application No.: US12807996Application Date: 2010-09-17
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Publication No.: US08775719B2Publication Date: 2014-07-08
- Inventor: Peter W. Lee , Fu-Chang Hsu , Kesheng Wang
- Applicant: Peter W. Lee , Fu-Chang Hsu , Kesheng Wang
- Applicant Address: US CA Fremont
- Assignee: Aplus Flash Technology, Inc.
- Current Assignee: Aplus Flash Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman; Billy Knowles
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
A nonvolatile memory device includes multiple independent nonvolatile memory arrays that concurrently for parallel reading and writing the nonvolatile memory arrays. A parallel interface communicates commands, address, device status, and data between a master device and nonvolatile memory arrays for concurrently reading and writing of the nonvolatile memory arrays and sub-arrays. Data is transferred on the parallel interface at the rising edge and the falling edge of the synchronizing clock. The parallel interface transmits a command code and an address code from a master device and transfers a data code between the master device and the nonvolatile memory device, wherein the data code has a length that is determined by the command code and a location determined by the address code. Reading one nonvolatile memory array may be interrupted for reading another. One reading operation has two sub-addresses with one transferred prior to a command.
Public/Granted literature
- US20110072200A1 Novel NAND-based hybrid NVM design that integrates NAND and NOR in 1-die with parallel interface Public/Granted day:2011-03-24
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