Invention Grant
US08775722B2 Storing data in parallel in a flash storage device using on chip page shifting between planes
有权
在闪存存储设备中并行存储数据,使用片上页面在平面之间切换
- Patent Title: Storing data in parallel in a flash storage device using on chip page shifting between planes
- Patent Title (中): 在闪存存储设备中并行存储数据,使用片上页面在平面之间切换
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Application No.: US13341543Application Date: 2011-12-30
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Publication No.: US08775722B2Publication Date: 2014-07-08
- Inventor: Steven Sprouse , Sergey Anatolievich Gorobets
- Applicant: Steven Sprouse , Sergey Anatolievich Gorobets
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Brinks Gilson & Lione
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
Methods and systems are disclosed herein for storing data in a memory device. Data for multiple pages is written in parallel using plane interleaving. For example, in a four plane write, a first set of four pages are written in the following sequence: 0, 1, 2, 3. A second set of four pages, after plane interleaving, are written in the following sequent: 7, 4, 5, 6. After writing the data, the pages of written data are read, page swapped if necessary, and then written into another portion of memory (such as MLC).
Public/Granted literature
- US20130173847A1 Metablock Size Reduction Using on Chip Page Swapping Between Planes Public/Granted day:2013-07-04
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