Invention Grant
- Patent Title: Memory device refresh commands on the fly
- Patent Title (中): 内存设备刷新命令
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Application No.: US12977974Application Date: 2010-12-23
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Publication No.: US08775725B2Publication Date: 2014-07-08
- Inventor: Kuljit S. Bains
- Applicant: Kuljit S. Bains
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: G06F13/00
- IPC: G06F13/00 ; G11C11/406

Abstract:
On the fly switching from one memory device refresh rate to another is provided. Control logic associated with the memory device detects a condition to switch from a currently-applied refresh rate to a different refresh rate. In response to the condition, the refresh rate is dynamically switched. The switching does not require a change of a mode register. Thus, a refresh rate for the memory device can be dynamically changed on the fly.
Public/Granted literature
- US20120144106A1 Memory Device Refresh Commands On the Fly Public/Granted day:2012-06-07
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