Invention Grant
US08775901B2 Data recovery for defective word lines during programming of non-volatile memory arrays
有权
在非易失性存储器阵列编程期间对缺陷字线进行数据恢复
- Patent Title: Data recovery for defective word lines during programming of non-volatile memory arrays
- Patent Title (中): 在非易失性存储器阵列编程期间对缺陷字线进行数据恢复
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Application No.: US13193148Application Date: 2011-07-28
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Publication No.: US08775901B2Publication Date: 2014-07-08
- Inventor: Eran Sharon , Idan Alrod
- Applicant: Eran Sharon , Idan Alrod
- Applicant Address: US TX Plano
- Assignee: Sandisk Technologies, Inc.
- Current Assignee: Sandisk Technologies, Inc.
- Current Assignee Address: US TX Plano
- Agency: Davis Wright Tremaine LLP
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C29/04 ; G06F11/10

Abstract:
The recovery of data during programming, such as in the case of a broken word-line, is considered. The arrangement described assumes that k pages may be corrupted when the system finishes programming a block. Then these corrupted pages can be recovered using an erasure code. In order to recover any k pages, the system will compute and temporarily store k parity pages in the controller. These k parity pages may be computed on-the-fly as the data pages are received from the host. After programming the block if a problem is detected in a post-write read, and data in up to k pages is corrupt on some bad word-lines, then the missing data is recovered using the k parity pages that are stored in the controller and using the other non-corrupted pages that are read from the block of the memory array and decoded.
Public/Granted literature
- US20130031429A1 Data Recovery for Defective Word Lines During Programming of Non-Volatile Memory Arrays Public/Granted day:2013-01-31
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