Invention Grant
US08775977B2 Decomposition and marking of semiconductor device design layout in double patterning lithography
有权
半双工图案平版印刷中半导体器件设计布局的分解和标记
- Patent Title: Decomposition and marking of semiconductor device design layout in double patterning lithography
- Patent Title (中): 半双工图案平版印刷中半导体器件设计布局的分解和标记
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Application No.: US13027520Application Date: 2011-02-15
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Publication No.: US08775977B2Publication Date: 2014-07-08
- Inventor: Chin-Chang Hsu , Wen-Ju Yang , Hsiao-Shu Chao , Yi-Kan Cheng , Lee-Chung Lu
- Applicant: Chin-Chang Hsu , Wen-Ju Yang , Hsiao-Shu Chao , Yi-Kan Cheng , Lee-Chung Lu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
Provided is a system and method for assessing a design layout for a semiconductor device level and for determining and designating different features of the design layout to be formed by different photomasks by decomposing the design layout. The features are designated by markings that associate the various device features with the multiple photomasks upon which they will be formed and then produced on a semiconductor device level using double patterning lithography, DPL, techniques. The markings are done at the device level and are included on the electronic file provided by the design house to the photomask foundry. In addition to overlay and critical dimension considerations for the design layout being decomposed, various other device criteria, design criteria processing criteria and their interrelation are taken into account, as well as device environment and the other device layers, when determining and marking the various device features.
Public/Granted literature
- US20120210279A1 DECOMPOSITION AND MARKING OF SEMICONDUCTOR DEVICE DESIGN LAYOUT IN DOUBLE PATTERNING LITHOGRAPHY Public/Granted day:2012-08-16
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