Invention Grant
US08775980B2 Trench silicide mask generation using designated trench transfer and trench block regions 有权
使用指定沟槽转移和沟槽块区域的沟槽硅化物掩模生成

Trench silicide mask generation using designated trench transfer and trench block regions
Abstract:
A method for designating TT and TB regions utilizing designated TS regions, without fully generating TT and TB features, and thereafter fabricating TS regions utilizing the designated TT and TB regions, is disclosed. Embodiments include: determining a TS having a placement and shape, the TS shape having a first horizontal dimension and a first vertical dimension; determining an active region including the TS; determining an extended TS including the TS and an extension portion in the horizontal and vertical directions, adjacent each edge of the TS; and determining a TB region based on the active region and the extended TS.
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