Invention Grant
US08776003B2 System and method for employing side transition times from signoff-quality timing analysis information to reduce leakage power in an electronic circuit and an electronic design automation tool incorporating the same 失效
用于从签发质量定时分析信息中采用侧转换时间以减少电子电路中的泄漏功率的系统和方法以及包括其的电子设计自动化工具

  • Patent Title: System and method for employing side transition times from signoff-quality timing analysis information to reduce leakage power in an electronic circuit and an electronic design automation tool incorporating the same
  • Patent Title (中): 用于从签发质量定时分析信息中采用侧转换时间以减少电子电路中的泄漏功率的系统和方法以及包括其的电子设计自动化工具
  • Application No.: US13563145
    Application Date: 2012-07-31
  • Publication No.: US08776003B2
    Publication Date: 2014-07-08
  • Inventor: Bruce E. ZahnDonald J. Wingate
  • Applicant: Bruce E. ZahnDonald J. Wingate
  • Applicant Address: US CA Milpitas
  • Assignee: LSI Corporation
  • Current Assignee: LSI Corporation
  • Current Assignee Address: US CA Milpitas
  • Main IPC: G06F17/50
  • IPC: G06F17/50 G06F9/455
System and method for employing side transition times from signoff-quality timing analysis information to reduce leakage power in an electronic circuit and an electronic design automation tool incorporating the same
Abstract:
The disclosure provides leakage power recovery that considers side transition times of multi-input cells. In one embodiment, a leakage power recovery system is disclosed that includes: (1) a power recovery module that considers side transitions when making a first conditional replacement of a cell in a path of a circuit design with a lower leakage cell and estimates delays and slack of the at least one path of the circuit design, and (2) a speed recovery module that makes a second conditional replacement of a slower lower leakage cell of the path with a higher leakage cell when there is a timing violation with respect to the path, determines if any other cells of the at least one path has a slower input transition and makes a third conditional replacement of a driver thereof to a higher leakage cell when the driver is one of the slower lower leakage cells.
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