Invention Grant
- Patent Title: Lateral-flow deposition apparatus and method of depositing film by using the apparatus
- Patent Title (中): 侧流沉积装置和使用该装置沉积膜的方法
-
Application No.: US12841139Application Date: 2010-07-21
-
Publication No.: US08778083B2Publication Date: 2014-07-15
- Inventor: Ki Jong Kim , Yong Min Yoo , Jung Soo Kim , Hyung Sang Park , Seung Woo Choi , Jeong Ho Lee , Dong Rak Jung
- Applicant: Ki Jong Kim , Yong Min Yoo , Jung Soo Kim , Hyung Sang Park , Seung Woo Choi , Jeong Ho Lee , Dong Rak Jung
- Applicant Address: KR Cheonan-Si
- Assignee: ASM Genitech Korea Ltd.
- Current Assignee: ASM Genitech Korea Ltd.
- Current Assignee Address: KR Cheonan-Si
- Agency: Lexyoume IP Meister, PLLC
- Priority: KR10-2009-0067047 20090722
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23C16/46 ; C23C16/455 ; C23C16/458

Abstract:
A deposition apparatus according to an exemplary embodiment of the present invention is a lateral-flow deposition apparatus in which in which a process gas flows between a surface where a substrate is disposed and the opposite surface, substantially in parallel with the substrate. The lateral-flow deposition apparatus includes: a substrate support that moves up/down and rotates the substrate while supporting the substrate; a reactor cover that defines a reaction chamber by contacting the substrate support; and a substrate support lifter and a substrate support rotator that move the substrate support.
Public/Granted literature
- US20110020545A1 LATERAL-FLOW DEPOSITION APPARATUS AND METHOD OF DEPOSITING FILM BY USING THE APPARATUS Public/Granted day:2011-01-27
Information query
IPC分类: