Invention Grant
US08778751B2 Method for producing a structure element and semiconductor component comprising a structure element
有权
用于制造包括结构元件的结构元件和半导体部件的方法
- Patent Title: Method for producing a structure element and semiconductor component comprising a structure element
- Patent Title (中): 用于制造包括结构元件的结构元件和半导体部件的方法
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Application No.: US13235550Application Date: 2011-09-19
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Publication No.: US08778751B2Publication Date: 2014-07-15
- Inventor: Martin Poelzl
- Applicant: Martin Poelzl
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102010046213 20100921
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L29/423 ; H01L29/08 ; H01L29/10 ; H01L29/417 ; H01L29/66 ; H01L29/78 ; H01L21/762
Abstract:
A semiconductor component includes a semiconductor body having a surface and a cutout in the semiconductor body. The cutout extends from the surface of the semiconductor body into the semiconductor body in a direction perpendicular to the surface. The cutout has a base and at least one sidewall. The component further includes a layer on the surface of the semiconductor body and in the cutout. The layer forms a well above the cutout. The well has a well base, a well edge and at least one well sidewall. The at least one well sidewall forms an angle α in the range of 20° to 80° with respect to the surface of the semiconductor body. The layer has at least one edge which, proceeding from the well edge, extends in the direction of the surface of the semiconductor body.
Public/Granted literature
- US20120068260A1 Method for producing a structure element and semiconductor component comprising a structure element Public/Granted day:2012-03-22
Information query
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