Invention Grant
US08779177B1 Method for bottom-up graphene sheet preparation and bandgap engineering
有权
自下而上的石墨烯片材制备和带隙工程的方法
- Patent Title: Method for bottom-up graphene sheet preparation and bandgap engineering
- Patent Title (中): 自下而上的石墨烯片材制备和带隙工程的方法
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Application No.: US12959197Application Date: 2010-12-02
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Publication No.: US08779177B1Publication Date: 2014-07-15
- Inventor: Chaoyin Zhou , Tina T. Salguero
- Applicant: Chaoyin Zhou , Tina T. Salguero
- Applicant Address: US CA Malibu
- Assignee: HRL Laboratories, LLC
- Current Assignee: HRL Laboratories, LLC
- Current Assignee Address: US CA Malibu
- Agency: Ladas & Parry
- Main IPC: C07F7/02
- IPC: C07F7/02

Abstract:
A combination of a substrate selected from silicon, silicon carbide or a metal and a graphene precursor having the following properties: (a) an aromatic structure that forms the basis of the graphene structure, said aromatic structure being selected from the group consisting of: benzene, naphthalene, pyrene, anthracene, chrysene, coronene, and phenanthrene, or a cyclic or acyclic structures which can be converted to aromatic structures and (b) functional groups that can react with each other to form additional aromatic structures.
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