Invention Grant
US08779177B1 Method for bottom-up graphene sheet preparation and bandgap engineering 有权
自下而上的石墨烯片材制备和带隙工程的方法

Method for bottom-up graphene sheet preparation and bandgap engineering
Abstract:
A combination of a substrate selected from silicon, silicon carbide or a metal and a graphene precursor having the following properties: (a) an aromatic structure that forms the basis of the graphene structure, said aromatic structure being selected from the group consisting of: benzene, naphthalene, pyrene, anthracene, chrysene, coronene, and phenanthrene, or a cyclic or acyclic structures which can be converted to aromatic structures and (b) functional groups that can react with each other to form additional aromatic structures.
Information query
Patent Agency Ranking
0/0