Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US13404734Application Date: 2012-02-24
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Publication No.: US08780646B2Publication Date: 2014-07-15
- Inventor: Yong-Mi Kim
- Applicant: Yong-Mi Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0115255 20111107
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C7/00 ; G11C8/00 ; G11C8/18
Abstract:
A semiconductor memory device includes a pipe latch circuit configured to receive parallel input data and output serial data or set an output terminal of the pipe latch circuit at a predetermined voltage level in response to an enable signal, and a synchronization circuit configured to output an output data of the pipe latch circuit in synchronization with an internal clock.
Public/Granted literature
- US20130114352A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2013-05-09
Information query
