Invention Grant
- Patent Title: PRBS test memory interface considering DDR burst operation
- Patent Title (中): PRBS测试存储器接口,考虑DDR突发操作
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Application No.: US13730284Application Date: 2012-12-28
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Publication No.: US08782475B2Publication Date: 2014-07-15
- Inventor: Zhiyuan Wang , Pu Wang , Qi Wu , Yufang Sun , Lisheng Wang , Qixin Li
- Applicant: Futurewei Technologies, Inc.
- Applicant Address: US TX Plano
- Assignee: Futurewei Technologies, Inc.
- Current Assignee: Futurewei Technologies, Inc.
- Current Assignee Address: US TX Plano
- Agency: Conley Rose, P.C.
- Agent Grant Rodolph; Nicholas K. Beaulieu
- Main IPC: G01R31/28
- IPC: G01R31/28 ; G01R31/3183

Abstract:
A method of testing an interconnect between an electronic component and an external memory comprises receiving a data word having data bits and translating the data word into multiple cycles. The multiple cycles are transmitted through the interconnect to the external memory one after another such that a value of the data bit being transmitted is switched for each cycle. In another embodiment, an electronic component comprises an interface, a translation unit, and a test module. The translation module is configured to receive a burst from the external memory through the interface and is configured to translate the burst into a data word. The test module is configured to receive the data word from the translation module and is configured to compare the data word to a test pattern to detect an interconnect defect.
Public/Granted literature
- US20140122955A1 PRBS TEST MEMORY INTERFACE CONSIDERING DDR BURST OPERATION Public/Granted day:2014-05-01
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