Invention Grant
- Patent Title: Memory and test method for memory
- Patent Title (中): 内存和内存的测试方法
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Application No.: US13338591Application Date: 2011-12-28
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Publication No.: US08782476B2Publication Date: 2014-07-15
- Inventor: Dae-Suk Kim
- Applicant: Dae-Suk Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0038571 20110425
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C29/56 ; G11C29/48 ; G11C29/44 ; G11C29/50

Abstract:
A test method for a memory having first and second cell arrays, first compressed data obtained by compressing output data of the first cell array and output data of the second cell array is outputted. When the first compressed data represents that a fail exists, output data of one of the first and second cell arrays is locked as normal data, and second compressed data obtained by compressing the normal data and output data of the other of the first and second cell arrays is outputted.
Public/Granted literature
- US20120272108A1 MEMORY AND TEST METHOD FOR MEMORY Public/Granted day:2012-10-25
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