Invention Grant
- Patent Title: Polycrystalline diamond and method of manufacturing the same
- Patent Title (中): 多晶金刚石及其制造方法
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Application No.: US13517921Application Date: 2011-08-10
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Publication No.: US08784767B2Publication Date: 2014-07-22
- Inventor: Hitoshi Sumiya , Katsuko Yamamoto , Takeshi Sato , Keiko Arimoto
- Applicant: Hitoshi Sumiya , Katsuko Yamamoto , Takeshi Sato , Keiko Arimoto
- Applicant Address: JP Osaka-shi
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi
- Agency: Venable LLP
- Agent Michael A. Sartori; Tamatane J. Aga
- Priority: JP2010-184187 20100819
- International Application: PCT/JP2011/068279 WO 20110810
- International Announcement: WO2012/023473 WO 20120223
- Main IPC: B01J3/06
- IPC: B01J3/06 ; B26D3/08 ; B31B1/25 ; B26D11/00 ; B24B21/18 ; B23F21/03 ; B21C3/00 ; B23H7/00 ; A62C31/02 ; B32B7/02 ; G11B5/64

Abstract:
Polycrystalline diamond includes cubic diamond and hexagonal diamond, and a ratio of X-ray diffraction peak intensity of a (100) plane of the hexagonal diamond to X-ray diffraction peak intensity for a (111) plane of cubic diamond is not lower than 0.01%. In addition, a present method of manufacturing polycrystalline diamond includes the steps of preparing a non-diamond carbon material having a degree of graphitization not higher than 0.58 and directly converting the non-diamond carbon material to cubic diamond and hexagonal diamond and sintering the non-diamond carbon material, without adding any of a sintering agent and a binder, under pressure and temperature conditions at which diamond is thermodynamically stable.
Public/Granted literature
- US08747798B2 Polycrystalline diamond and method of manufacturing the same Public/Granted day:2014-06-10
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