Invention Grant
- Patent Title: Solid-state imaging element, manufacturing method, and electronic device
- Patent Title (中): 固态成像元件，制造方法和电子器件
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Application No.: US13564030Application Date: 2012-08-01
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Publication No.: US08785993B2Publication Date: 2014-07-22
- Inventor: Takashi Abe
- Applicant: Takashi Abe
- Applicant Address: JP
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP
- Agency: Sheridan Ross P.C.
- Priority: JP2011-176721 20110812
- Main IPC: H01L31/06
- IPC: H01L31/06 ; H01L21/00
Abstract:
A solid-state imaging element includes a pixel having a photoelectric conversion section and a side pinning layer. The photoelectric conversion section is formed in a semiconductor substrate. The side pinning layer is formed on a side of the photoelectric conversion section. The side pinning layer is formed by performing ion implantation in a state of a trench being open, the trench being formed in a part on a side of a region in which the photoelectric conversion section is formed.
Public/Granted literature
- US20130037900A1 SOLID-STATE IMAGING ELEMENT, MANUFACTURING METHOD, AND ELECTRONIC DEVICE Public/Granted day:2013-02-14
Information query
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