Invention Grant
- Patent Title: Semiconductor devices and methods of manufacturing the same
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US13289576Application Date: 2011-11-04
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Publication No.: US08786058B2Publication Date: 2014-07-22
- Inventor: Kyu-Hee Han , Byung-Lyul Park , Byunghee Kim , Sanghoon Ahn , Sangdon Nam , Kyoung-Hee Kim
- Applicant: Kyu-Hee Han , Byung-Lyul Park , Byunghee Kim , Sanghoon Ahn , Sangdon Nam , Kyoung-Hee Kim
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2010-0110522 20101108
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
A semiconductor device is provided. The semiconductor device includes a substrate having a via hole comprised of a first region having a first width and a second region having a second width greater than the first width, wherein at least a portion of the substrate is exposed in the via hole, and an insulating region having an air gap spaced apart from and surrounding the first region of the via hole.
Public/Granted literature
- US20120112361A1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2012-05-10
Information query
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