Invention Grant
- Patent Title: Semiconductor storage device and method of manufacturing the same
- Patent Title (中): 半导体存储装置及其制造方法
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Application No.: US13010475Application Date: 2011-01-20
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Publication No.: US08787022B2Publication Date: 2014-07-22
- Inventor: Takakatsu Moriai , Toyokazu Eguchi , Atsushi Kaneko , Atsushi Okada
- Applicant: Takakatsu Moriai , Toyokazu Eguchi , Atsushi Kaneko , Atsushi Okada
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-172942 20090724; JP2009-293492 20091224; JP2010-121629 20100527
- Main IPC: H05K7/20
- IPC: H05K7/20
Abstract:
According to one embodiment, coupling capacitance in a state in which a first heat radiation member is arranged between parallel flat plates of a first capacitor formed by a surface of a housing opposed to one surface of a printed circuit board and the printed circuit board is smaller than coupling capacitance in a state in which an integrally formed object having a relative dielectric constant of 5.8 is arranged between the first capacitor to cover a first radiating region containing the controller and the first nonvolatile semiconductor memories.
Public/Granted literature
- US20110273834A1 SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-11-10
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