Invention Grant
- Patent Title: Forming spherical semiconductive nanoparticles
- Patent Title (中): 形成球形半导体纳米粒子
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Application No.: US12941409Application Date: 2010-11-08
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Publication No.: US08790440B2Publication Date: 2014-07-29
- Inventor: Kalin Spariosu
- Applicant: Kalin Spariosu
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Waltham
- Agency: Renner, Otto, Boisselle & Sklar, LLP
- Main IPC: B22F9/04
- IPC: B22F9/04 ; H01L21/477 ; B82Y40/00 ; H01L21/324 ; B22F9/12 ; H01L21/67
Abstract:
In certain embodiments, a material comprising one or more semiconductive substances is vaporized to generate a vapor phase condensate. The vapor phase condensate is allowed to form nanoparticles. The nanoparticles are annealed to yield substantially spherical nanoparticles.
Public/Granted literature
- US20120111148A1 Forming Spherical Semiconductive Nanoparticles Public/Granted day:2012-05-10
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