Invention Grant
- Patent Title: Oxide semiconductor field effect transistor and method for manufacturing the same
-
Application No.: US13862568Application Date: 2013-04-15
-
Publication No.: US08791457B2Publication Date: 2014-07-29
- Inventor: Koki Yano , Hirokazu Kawashima , Kazuyoshi Inoue , Shigekazu Tomai , Masashi Kasami
- Applicant: Idemitsu Kosan Co., Ltd.
- Applicant Address: JP Chiyoda-ku
- Assignee: Idemitsu Kosan Co., Ltd.
- Current Assignee: Idemitsu Kosan Co., Ltd.
- Current Assignee Address: JP Chiyoda-ku
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-332508 20071225; JP2007-338918 20071228
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/221
Abstract:
A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3): In/(In+Zn)=0.2 to 0.8 (1) In/(In+X)=0.29 to 0.99 (2) Zn/(X+Zn)=0.29 to 0.99 (3).
Public/Granted literature
- US20130313548A1 OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-11-28
Information query
IPC分类:
