Invention Grant
- Patent Title: Light emitting diode and method of making the same
- Patent Title (中): 发光二极管及其制作方法
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Application No.: US13105363Application Date: 2011-05-11
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Publication No.: US08791467B2Publication Date: 2014-07-29
- Inventor: Kuang-Neng Yang
- Applicant: Kuang-Neng Yang
- Applicant Address: TW Hsinchu
- Assignee: Epistar Corporation
- Current Assignee: Epistar Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW90102561A 20010206; TW91102629A 20020215
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
An embodiment of the present invention discloses a light-emitting structure having a light output power of more than 4mW at 20 mA current. Another embodiment of the present invention discloses a method of making a light-emitting structure having a light output power of more than 4mW at 20 mA current, and a layer with a thickness of 0.5 μm˜3μm.
Public/Granted literature
- US20110210330A1 LIGHT EMITTING DIODE AND METHOD OF MAKING THE SAME Public/Granted day:2011-09-01
Information query
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