Invention Grant
- Patent Title: GaN containing optical devices and method with ESD stability
- Patent Title (中): 含GaN的光学器件和具有ESD稳定性的方法
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Application No.: US12785953Application Date: 2010-05-24
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Publication No.: US08791499B1Publication Date: 2014-07-29
- Inventor: Rajat Sharma , Eric M. Hall
- Applicant: Rajat Sharma , Eric M. Hall
- Applicant Address: US CA Fremont
- Assignee: Soraa, Inc.
- Current Assignee: Soraa, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L29/861
- IPC: H01L29/861
Abstract:
An improved laser light emitting diode. The device has a gallium nitride substrate structure, which includes a surface region. The device also has an epitaxial layer overlying the surface region and a p-n junction formed within a portion of the epitaxial layer. In a preferred embodiment, the device also has one or more plane or line defects spatially configured in a manner to be free from intersecting the p-n junction, the one or more plane or line defects being at least 1×106 cm−2.
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