Invention Grant
- Patent Title: Methods of manufacturing metal-silicide features
- Patent Title (中): 金属硅化物的制造方法
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Application No.: US12861358Application Date: 2010-08-23
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Publication No.: US08791528B2Publication Date: 2014-07-29
- Inventor: Chen-Tung Lin , Chih-Wei Chang , Chii-Ming Wu , Mei-Yun Wang , Chaing-Ming Chuang , Shau-Lin Shue
- Applicant: Chen-Tung Lin , Chih-Wei Chang , Chii-Ming Wu , Mei-Yun Wang , Chaing-Ming Chuang , Shau-Lin Shue
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66
Abstract:
A method of manufacturing a microelectronic device including forming a dielectric layer surrounding a dummy feature located over a substrate, removing the dummy feature to form an opening in the dielectric layer, and forming a metal-silicide layer conforming to the opening. The metal-silicide layer may then be annealed.
Public/Granted literature
- US20100314698A1 METHODS OF MANUFACTURING METAL-SILICIDE FEATURES Public/Granted day:2010-12-16
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