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US08791542B2 Solid-state imaging device 有权
固态成像装置

Solid-state imaging device
Abstract:
According to an embodiment, a solid-state imaging device includes a photoelectric, conversion element. The photoelectric conversion element includes a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer. In the solid-state imaging device, D2m3/L2m3×ni32/N2
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