Invention Grant
- Patent Title: Rectifier circuit and semiconductor device using the same
- Patent Title (中): 整流电路和使用其的半导体器件
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Application No.: US13233138Application Date: 2011-09-15
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Publication No.: US08792260B2Publication Date: 2014-07-29
- Inventor: Masashi Fujita
- Applicant: Masashi Fujita
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2010-215030 20100927
- Main IPC: H02M7/217
- IPC: H02M7/217

Abstract:
An object is to provide a rectifier circuit of which the drop in the output voltage by the threshold voltage of a transistor used as a rectifier element is suppressed. Another object is to provide a rectifier circuit whose variations in the output voltage are suppressed even in the case where the amplitude of input AC voltage varies greatly. A transistor may be used as a rectifier element in such a way that a gate electrode of the transistor is connected to a second electrode of the transistor through a capacitor, and the potential of the gate electrode is held to be higher than the potential of the second electrode by a difference greater than or equal to the threshold voltage.
Public/Granted literature
- US20120075897A1 RECTIFIER CIRCUIT AND SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2012-03-29
Information query
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