Invention Grant
US08795430B2 Method of improving surface morphology of (Ga,Al,In,B)N thin films and devices grown on nonpolar or semipolar (Ga,Al,In,B)N substrates
有权
改善（Ga，Al，In，B）N薄膜和在非极性或半极性（Ga，Al，In，B）N底物上生长的器件的表面形态的方法
- Patent Title: Method of improving surface morphology of (Ga,Al,In,B)N thin films and devices grown on nonpolar or semipolar (Ga,Al,In,B)N substrates
- Patent Title (中): 改善（Ga，Al，In，B）N薄膜和在非极性或半极性（Ga，Al，In，B）N底物上生长的器件的表面形态的方法
-
Application No.: US12716176Application Date: 2010-03-02
-
Publication No.: US08795430B2Publication Date: 2014-08-05
- Inventor: Robert M. Farrell , Michael Iza , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- Applicant: Robert M. Farrell , Michael Iza , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: B32B27/32
- IPC: B32B27/32 ; B32B17/10 ; B32B9/00 ; B32B19/00 ; C30B23/00 ; C30B25/00 ; C30B28/12 ; C30B28/14
Abstract:
A method for improving the growth morphology of (Ga,Al,In,B)N thin films on nonpolar or semipolar (Ga,Al,In,B)N substrates, wherein a (Ga,Al,In,B)N thin film is grown directly on a nonpolar or semipolar (Ga,Al,In,B)N substrate or template and a portion of the carrier gas used during growth is comprised of an inert gas. Nonpolar or semipolar nitride LEDs and diode lasers may be grown on the smooth (Ga,Al,In,B)N thin films grown by the present invention.
Public/Granted literature
Information query
