Invention Grant
- Patent Title: Method for manufacturing perpendicular magnetic recording medium
- Patent Title (中): 制造垂直磁记录介质的方法
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Application No.: US11253431Application Date: 2005-10-18
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Publication No.: US08795478B2Publication Date: 2014-08-05
- Inventor: Yoshinori Honda , Takayuki Ichihara , Hiroyuki Nakagawa , Kiwamu Tanahashi
- Applicant: Yoshinori Honda , Takayuki Ichihara , Hiroyuki Nakagawa , Kiwamu Tanahashi
- Applicant Address: NL Amsterdam
- Assignee: HGST Netherlands B.V.
- Current Assignee: HGST Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Zilka-Kotab, PC
- Priority: JP2004-306378 20041021
- Main IPC: C23C14/00
- IPC: C23C14/00 ; C23C14/32 ; G11B5/66 ; C23C14/06 ; G11B5/851 ; H01J37/34 ; C23C14/34 ; G11B5/73 ; G11B5/65 ; G11B5/667

Abstract:
Embodiments of the invention provide a manufacturing method which permits a high quality perpendicular magnetic recording medium to be manufactured with a high yield by preventing abnormal discharge which sputters particles from the target. In one embodiment, while the perpendicular magnetic recording medium is formed, DC pulses are applied to the target. During the reversal period (Reversal Time) between sputtering periods, a voltage of the opposite polarity is applied. During the sputtering period, a negative voltage is applied which biases the target surface to a negative potential, causing Ar+ to collide with and sputter CoCrPt and SiO2 for deposition on the intermediate layer. The top surface of the insulation material (SiO2) on the target is charged by Ar+ to have a voltage larger than the target voltage. However, arcing can be prevented since the charge on the surface of the insulation material is neutralized due to a positive voltage applied to the target during the non-sputtering period.
Public/Granted literature
- US20060086606A1 Method for manufacturing perpendicular magnetic recording medium Public/Granted day:2006-04-27
Information query
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