Invention Grant
- Patent Title: Method for manufacturing a one-dimensional nano-structure-based device
- Patent Title (中): 制造一维纳米结构的装置的方法
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Application No.: US11371877Application Date: 2006-03-08
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Publication No.: US08795495B2Publication Date: 2014-08-05
- Inventor: Yang Wei , Shou-Shan Fan
- Applicant: Yang Wei , Shou-Shan Fan
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: CN200510033908 20050330
- Main IPC: C25D13/02
- IPC: C25D13/02

Abstract:
A method for manufacturing a one-dimensional nano-structure-based device includes the steps of preparing a solution (14) containing one-dimensional nano-structures (18); providing a plurality of electrical conductors (42), each of the electrical conductors having a first tip (421) to be treated; providing a fixing device (44) having a second tip (441); connecting at least one of the one-dimensional nano-structures with one of the electrical conductors; and repeating the connecting step to another one of the first tips to be treated. Therein, the connecting step further includes the steps of, in part: applying at least a drop of the solution to the first and second tips thereby the first and second tips being interconnected by the solution; applying a voltage between the first and second tips thereby at least one one-dimensional nano-structures being interconnected therewith; and separating the second tip from the first tip.
Public/Granted literature
- US20100104735A1 Method for manufacturing a one-dimensional nano-structure-based device Public/Granted day:2010-04-29
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