Invention Grant
- Patent Title: Method for manufacturing a one-dimensional nano-structure-based device
- Patent Title (中): 制造一维纳米结构的装置的方法
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Application No.: US11371994Application Date: 2006-03-08
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Publication No.: US08795496B2Publication Date: 2014-08-05
- Inventor: Yang Wei , Shou-Shan Fan
- Applicant: Yang Wei , Shou-Shan Fan
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: CN200510033943 20050331
- Main IPC: C25D13/02
- IPC: C25D13/02

Abstract:
A method for manufacturing a one-dimensional nano-structure-based device comprises the steps of: preparing a solution (14) containing one-dimensional nano-structures (18); providing a pair of electrical conductors (10, 12) each having a tip (101, 121), the tips thereof being spaced apart from and opposite to each other; applying the solution to the tips of the electrical conductors thereby the tips being interconnected by the solution; applying a voltage (16) between the two conductors thereby at least one one-dimensional nano-structure being interconnected between the tips of the electrical conductors; and applying an external energy to at least one of the conductors and the one-dimensional nano-structure so as to disconnect the conductors from each other thereby obtaining at least one conductor having the tip with the one-dimensional nano-structure connected therewith.
Public/Granted literature
- US20060225163A1 Method for manufacturing a one-dimensional nano-structure-based device Public/Granted day:2006-10-05
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