Invention Grant
- Patent Title: Removal of silicon nitrides during manufacturing of semiconductor devices
- Patent Title (中): 在制造半导体器件期间去除氮化硅
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Application No.: US13190653Application Date: 2011-07-26
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Publication No.: US08795542B2Publication Date: 2014-08-05
- Inventor: Edwin Adhiprakasha
- Applicant: Edwin Adhiprakasha
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: C03C15/00
- IPC: C03C15/00
Abstract:
A method to remove excess material during the manufacturing of semiconductor devices includes providing a semiconductor wafer comprising silicon nitride deposited thereon and applying a chemical solution to the semiconductor wafer, wherein the chemical solution comprises a combination of sulfuric acid and deionized water.
Public/Granted literature
- US20130029495A1 REMOVAL OF SILICON NITRIDES DURING MANUFACTURING OF SEMICONDUCTOR DEVICES Public/Granted day:2013-01-31
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