Invention Grant
US08795556B2 Self-aligned permanent on-chip interconnect structure formed by pitch splitting
有权
通过间距分割形成的自对准永久性片上互连结构
- Patent Title: Self-aligned permanent on-chip interconnect structure formed by pitch splitting
- Patent Title (中): 通过间距分割形成的自对准永久性片上互连结构
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Application No.: US13454723Application Date: 2012-04-24
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Publication No.: US08795556B2Publication Date: 2014-08-05
- Inventor: Qinghuang Lin
- Applicant: Qinghuang Lin
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: C09K5/00
- IPC: C09K5/00 ; G03F7/095 ; G03F7/075 ; H01L21/3105 ; H01L21/768 ; H01L21/027 ; G03F7/004 ; H01L21/31 ; G03F7/039 ; H01L21/02 ; H01L23/532 ; G03F7/038
Abstract:
A hybrid photo-patternable dielectric material is provided that has dual-tone properties with a parabola like dissolution response to radiation. In one embodiment, the hybrid photo-patternable dielectric material includes a composition of at least one positive-tone component including a positive-tone polymer, positive-tone copolymer, or blends of positive-tone polymers and/or positive-tone copolymers having one or more acid sensitive positive-tone functional groups; at least one negative-tone component including a negative-tone polymer, negative-tone copolymer, or blends of negative-tone polymers and/or negative-tone copolymers having one or more acid sensitive negative-tone functional groups; at least one photoacid generator; and at least one solvent that is compatible with the positive-tone and negative-tone components.
Public/Granted literature
- US20120205818A1 SELF-ALIGNED PERMANENT ON-CHIP INTERCONNECT STRUCTURE FORMED BY PITCH SPLITTING Public/Granted day:2012-08-16
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