Invention Grant
US08796076B2 Stacked semiconductor devices and fabrication method/equipment for the same
有权
堆叠的半导体器件和制造方法/设备相同
- Patent Title: Stacked semiconductor devices and fabrication method/equipment for the same
- Patent Title (中): 堆叠的半导体器件和制造方法/设备相同
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Application No.: US13600153Application Date: 2012-08-30
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Publication No.: US08796076B2Publication Date: 2014-08-05
- Inventor: Atsushi Yoshimura , Shoko Omizo
- Applicant: Atsushi Yoshimura , Shoko Omizo
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JPP2011-190810 20110901
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/30
Abstract:
After formation of an opening by exposing and development of the photosensitive surface protection film and adhesive layer which is formed on the circuit side of the semiconductor wafer, the semiconductor chips having a photosensitive surface protection film and adhesive layer thereon is fabricated by cutting individual chips from the semiconductor wafer. After the second semiconductor chip is placed over the first semiconductor chip up by the suction collet, the second semiconductor chip is bonded with the first semiconductor chip by the first surface protection film and adhesive layer. The suction side of the suction collet has lower adhesion to the second semiconductor chip than that between the now bonded semiconductor chips.
Public/Granted literature
- US20130062782A1 STACKED SEMICONDUCTOR DEVICES AND FABRICATION METHOD/EQUIPMENT FOR THE SAME Public/Granted day:2013-03-14
Information query
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