Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13545274Application Date: 2012-07-10
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Publication No.: US08796088B2Publication Date: 2014-08-05
- Inventor: Chul Jin Yoon
- Applicant: Chul Jin Yoon
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Sherr & Jiang, PLLC
- Priority: KR10-2011-0125199 20111128
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A semiconductor device and a method of fabricating the semiconductor device is provided. In the method, a semiconductor substrate defining a device region and an outer region at a periphery of the device region is provided, an align trench is formed in the outer region, a dummy trench is formed in the device region, an epi layer is formed over a top surface of the semiconductor substrate and within the dummy trench, a current path changing part is formed over the epi layer, and a gate electrode is formed over the current path changing part. When the epi layer is formed, a current path changing trench corresponding to the dummy trench is formed over the epi layer, and the current path changing part is formed within the current path changing trench.
Public/Granted literature
- US20130134526A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2013-05-30
Information query
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