Invention Grant
- Patent Title: Self-aligned double-gate graphene transistor
- Patent Title (中): 自对准双栅极石墨烯晶体管
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Application No.: US13693700Application Date: 2012-12-04
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Publication No.: US08796096B2Publication Date: 2014-08-05
- Inventor: Damon B. Farmer , Aaron D. Franklin , Joshua T. Smith
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/16 ; H01L29/786 ; H01L21/02
Abstract:
A method of fabricating a semiconducting device is disclosed. A graphene sheet is formed on a substrate. At least one slot is formed in the graphene sheet, wherein the at least one slot has a width that allows an etchant to pass through the graphene sheet. An etchant is applied to the substrate through the at least one slot formed in the graphene sheet to etch the substrate.
Public/Granted literature
- US20140151640A1 SELF-ALIGNED DOUBLE-GATE GRAPHENE TRANSISTOR Public/Granted day:2014-06-05
Information query
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