Invention Grant
US08796100B2 Methods of manufacturing lateral diffused MOS devices with layout controlled body curvature and related devices
有权
制造具有布局受控体弯曲度的横向扩散MOS器件的方法及相关器件
- Patent Title: Methods of manufacturing lateral diffused MOS devices with layout controlled body curvature and related devices
- Patent Title (中): 制造具有布局受控体弯曲度的横向扩散MOS器件的方法及相关器件
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Application No.: US13205491Application Date: 2011-08-08
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Publication No.: US08796100B2Publication Date: 2014-08-05
- Inventor: Jeesung Jung
- Applicant: Jeesung Jung
- Applicant Address: US CA San Jose
- Assignee: Monolithic Power Systems, Inc.
- Current Assignee: Monolithic Power Systems, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Perkins Coie LLP
- Main IPC: H01L21/331
- IPC: H01L21/331 ; H01L31/113 ; H01L29/00
Abstract:
The present invention discloses a method of manufacturing an N-type LDMOS device. The method comprises forming a gate above the semiconductor substrate; forming a body, comprising forming a Pwell apart from the gate and forming a Pbase partly in the Pwell, wherein the Pbase is wider and shallower than the Pwell; and forming an N-type source and a drain contact region. Wherein the body curvature of the LDMOS device is controlled by adjusting the layout width of the Pwell.
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