Invention Grant
- Patent Title: Method for handling a thin substrate and for substrate capping
- Patent Title (中): 处理薄基板和基板封盖的方法
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Application No.: US13214917Application Date: 2011-08-22
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Publication No.: US08796110B2Publication Date: 2014-08-05
- Inventor: Kuei-Sung Chang , Yi Heng Tsai
- Applicant: Kuei-Sung Chang , Yi Heng Tsai
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater and Matsil, L.L.P.
- Main IPC: H01L21/306
- IPC: H01L21/306

Abstract:
An embodiment is a method for bonding. The method comprises bonding a handle substrate to a capping substrate; thinning the capping substrate; etching the capping substrate; and after the thinning and the etching the capping substrate, bonding the capping substrate to an active substrate. The handle substrate has an opening therethrough. The method also comprises removing the handle substrate from the capping substrate. The removing comprises providing an etchant through the opening to separate the handle substrate from the capping substrate. Other embodiments further include forming a bonding material on a surface of at least one of the handle substrate and the capping substrate such that the capping substrate is bonded to the handle substrate by the bonding material. The bonding material may be removed by using a dry etching to remove the handle substrate from the capping substrate.
Public/Granted literature
- US20130052797A1 Method for Handling a Thin Substrate and for Substrate Capping Public/Granted day:2013-02-28
Information query
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