Invention Grant
- Patent Title: Stacked layers of nitride semiconductor and method for manufacturing the same
- Patent Title (中): 堆叠氮化物半导体层及其制造方法
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Application No.: US13946898Application Date: 2013-07-19
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Publication No.: US08796111B2Publication Date: 2014-08-05
- Inventor: Hideto Sugawara , Masaaki Onomura
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: White & Case LLP
- Priority: JP2010-284523 20101221
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L33/00 ; H01L21/02 ; H01L29/20
Abstract:
According to one embodiment, stacked layers of a nitride semiconductor include a substrate, a single crystal layer and a nitride semiconductor layer. The substrate does not include a nitride semiconductor and has a protrusion on a major surface. The single crystal layer is provided directly on the major surface of the substrate to cover the protrusion, and includes a crack therein. The nitride semiconductor layer is provided on the single crystal layer.
Public/Granted literature
- US20130302931A1 STACKED LAYERS OF NITRIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-11-14
Information query
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