Invention Grant
- Patent Title: Method for slicing a substrate wafer
- Patent Title (中): 切片基片晶圆的方法
-
Application No.: US13805898Application Date: 2011-06-14
-
Publication No.: US08796114B2Publication Date: 2014-08-05
- Inventor: Ralph Wagner
- Applicant: Ralph Wagner
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Cozen O'Connor
- Priority: DE102010030358 20100622
- International Application: PCT/EP2011/059792 WO 20110614
- International Announcement: WO2011/160977 WO 20111229
- Main IPC: H01L21/46
- IPC: H01L21/46
Abstract:
A method for slicing a monocrystalline semiconductor layer (116) from a semiconductor single crystal (100) comprising: providing a semiconductor single crystal (100) having a uniform crystal structure; locally modifying the crystal structure within a separating plane (104) in the semiconductor single crystal (100) into an altered microstructure state by means of irradiation using a laser (106); and removing the modified separating plane (104) by means of selective etching.
Public/Granted literature
- US20130089969A1 Method for Slicing a Substrate Wafer Public/Granted day:2013-04-11
Information query
IPC分类:
