Invention Grant
- Patent Title: Stress mitigating amorphous SiO2 interlayer
- Patent Title (中): 减轻无定形SiO2中间层的应力
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Application No.: US14083672Application Date: 2013-11-19
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Publication No.: US08796121B1Publication Date: 2014-08-05
- Inventor: Rytis Dargis , Andrew Clark , Erdem Arkun
- Applicant: Rytis Dargis , Andrew Clark , Erdem Arkun
- Applicant Address: US CA Palo Alto
- Assignee: Translucent, Inc.
- Current Assignee: Translucent, Inc.
- Current Assignee Address: US CA Palo Alto
- Main IPC: H01L21/20
- IPC: H01L21/20 ; C30B25/18 ; C30B25/22
Abstract:
A method of forming a REO dielectric layer and a layer of a-Si between a III-N layer and a silicon substrate. The method includes depositing single crystal REO on the substrate. The single crystal REO has a lattice constant adjacent the substrate matching the lattice constant of the substrate and a lattice constant matching a selected III-N material adjacent an upper surface. A uniform layer of a-Si is formed on the REO. A second layer of REO is deposited on the layer of a-Si with the temperature required for epitaxial growth crystallizing the layer of a-Si and the crystallized silicon being transformed to amorphous silicon after transferring the lattice constant of the selected III-N material of the first layer of REO to the second layer of REO, and a single crystal layer of the selected III-N material deposited on the second layer of REO.
Information query
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