Invention Grant
US08796158B2 Methods for forming circuit pattern forming region in an insulating substrate
有权
在绝缘基板中形成电路图案形成区域的方法
- Patent Title: Methods for forming circuit pattern forming region in an insulating substrate
- Patent Title (中): 在绝缘基板中形成电路图案形成区域的方法
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Application No.: US13346041Application Date: 2012-01-09
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Publication No.: US08796158B2Publication Date: 2014-08-05
- Inventor: Kyoung-sei Choi
- Applicant: Kyoung-sei Choi
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Harness, Dickey & Pierce, PLC
- Priority: KR10-2003-0037859 20030612
- Main IPC: H01L21/469
- IPC: H01L21/469 ; H01L23/053 ; H01L21/48 ; H01L21/312 ; H01L23/31
Abstract:
A method for forming a circuit pattern forming region in an insulating substrate may include preparing a metallic pattern, coating a polymer solution on a casting vessel, precuring the polymer solution, and forming an imprinted circuit pattern forming region in the precured polymer solution using the metallic pattern.
Public/Granted literature
- US20120102734A1 METHODS FOR FORMING CIRCUIT PATTERN FORMING REGION IN AN INSULATING SUBSTRATE Public/Granted day:2012-05-03
Information query
IPC分类:
