Invention Grant
- Patent Title: Thermal-type infrared solid-state image sensing device and method of manufacturing the same
- Patent Title (中): 热式红外固体摄像装置及其制造方法
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Application No.: US13429283Application Date: 2012-03-23
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Publication No.: US08796630B2Publication Date: 2014-08-05
- Inventor: Shigeru Tohyama
- Applicant: Shigeru Tohyama
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2011-067719 20110325
- Main IPC: G01J5/12
- IPC: G01J5/12 ; G01J5/02 ; H01L31/18

Abstract:
In the reference element employed in the thermal-type infrared solid-state image sensing device according to the present invention, a slit used for construction of a light receiving element is opened in insulating films between which a thermoelectric conversion element is tucked to such an extent that the slit pierces into the sacrifice layer; a film made of electrically conductive material covering the light receiving section and the slit is provided and a protective film is provided thereon, and the film made of electrically conductive material and the protective film enter the interior of the slit along a side wall of the slit, whereby a void is left in the interior of the slit. As a result, residual stresses of the insulating films are kept equal in the light receiving element and the reference element, and thereby, the light blocking effect and the heat transfer effect are improved.
Public/Granted literature
- US20120241626A1 THERMAL-TYPE INFRARED SOLID-STATE IMAGE SENSING DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-09-27
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