Invention Grant
US08796661B2 Nonvolatile memory cells and methods of forming nonvolatile memory cell
有权
非易失性存储单元和形成非易失性存储单元的方法
- Patent Title: Nonvolatile memory cells and methods of forming nonvolatile memory cell
- Patent Title (中): 非易失性存储单元和形成非易失性存储单元的方法
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Application No.: US12917348Application Date: 2010-11-01
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Publication No.: US08796661B2Publication Date: 2014-08-05
- Inventor: Nirmal Ramaswamy , Gurtej Sandhu
- Applicant: Nirmal Ramaswamy , Gurtej Sandhu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L21/06 ; H01L21/20
Abstract:
A method of forming a nonvolatile memory cell includes forming a first electrode having a first current conductive material and a circumferentially self-aligned second current conductive material projecting elevationally outward from the first current conductive material. The second current conductive material is different in composition from the first current conductive material. A programmable region is formed over the first current conductive material and over the projecting second current conductive material of the first electrode. A second electrode is formed over the programmable region. In one embodiment, the programmable region is ion conductive material, and at least one of the first and second electrodes has an electrochemically active surface directly against the ion conductive material. Other method and structural aspects are disclosed.
Public/Granted literature
- US20120104343A1 Nonvolatile Memory Cells and Methods Of Forming Nonvolatile Memory Cell Public/Granted day:2012-05-03
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