Invention Grant
- Patent Title: Solid state radiation transducers and methods of manufacturing
- Patent Title (中): 固态辐射传感器和制造方法
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Application No.: US13219518Application Date: 2011-08-26
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Publication No.: US08796665B2Publication Date: 2014-08-05
- Inventor: Scott E. Sills , Anton J. De Villiers
- Applicant: Scott E. Sills , Anton J. De Villiers
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L33/30
- IPC: H01L33/30 ; H01L33/06 ; H01L33/08 ; H01L33/48

Abstract:
Solid state radiation transducer (SSRT) assemblies and method for making SSRT assemblies. In one embodiment, a SSRT assembly comprises a first substrate having an epitaxial growth material and a radiation transducer on the first substrate. The radiation transducer can have a first semiconductor material grown on the first substrate, a second semiconductor material, and an active region between the first and second semiconductor materials. The SSRT can also have a first contact electrically coupled to the first semiconductor material and a second contact electrically coupled to the second semiconductor material. The first substrate has an opening through which radiation can pass to and/or from the first semiconductor material.
Public/Granted literature
- US20130048940A1 SOLID STATE RADIATION TRANSDUCERS AND METHODS OF MANUFACTURING Public/Granted day:2013-02-28
Information query
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