Invention Grant
- Patent Title: Thin film transistor having semiconductor active layer
- Patent Title (中): 具有半导体活性层的薄膜晶体管
-
Application No.: US13230169Application Date: 2011-09-12
-
Publication No.: US08796679B2Publication Date: 2014-08-05
- Inventor: Jong-han Jeong , Jae-kyeong Jeong , Jin-seong Park , Yeon-gon Mo , Hui-won Yang , Min-kyu Kim , Tae-kyung Ahn , Hyun-soo Shin , Hun jung Lee
- Applicant: Jong-han Jeong , Jae-kyeong Jeong , Jin-seong Park , Yeon-gon Mo , Hui-won Yang , Min-kyu Kim , Tae-kyung Ahn , Hyun-soo Shin , Hun jung Lee
- Applicant Address: KR Yongin, Gyeonggi-Do
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin, Gyeonggi-Do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2007-0071150 20070716
- Main IPC: H01L29/10
- IPC: H01L29/10
Abstract:
A method of manufacturing an IGZO active layer includes depositing ions including In, Ga, and Zn from a first target, and depositing ions including In from a second target having a different atomic composition from the first target. The deposition of ions from the second target may be controlled to adjust an atomic % of In in the IGZO layer to be about 45 atomic % to about 80 atomic %.
Public/Granted literature
- US20110315983A1 THIN FILM TRANSISTOR HAVING SEMICONDUCTOR ACTIVE LAYER Public/Granted day:2011-12-29
Information query
IPC分类:
