Invention Grant
- Patent Title: Integrated circuits with leakage current test structure
- Patent Title (中): 具有漏电流测试结构的集成电路
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Application No.: US13219369Application Date: 2011-08-26
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Publication No.: US08796686B2Publication Date: 2014-08-05
- Inventor: Chung-Ying Yang , Hsien-Wei Chen
- Applicant: Chung-Ying Yang , Hsien-Wei Chen
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L23/58
- IPC: H01L23/58

Abstract:
An integrated circuit includes a seal ring structure disposed around a circuit that is disposed over a substrate. A first pad is electrically coupled with the seal ring structure. A leakage current test structure is disposed adjacent to the seal ring structure. A second pad electrically coupled with the leakage current test structure, wherein the leakage current test structure is configured to provide a leakage current test between the seal ring structure and the leakage current test structure.
Public/Granted literature
- US20130048980A1 INTEGRATED CIRCUITS WITH LEAKAGE CURRENT TEST STRUCTURE Public/Granted day:2013-02-28
Information query
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