Invention Grant
- Patent Title: Photonically-activated single-bias fast-switching integrated thyristor
- Patent Title (中): 光子激活单偏压快速开关集成晶闸管
-
Application No.: US13281207Application Date: 2011-10-25
-
Publication No.: US08796728B2Publication Date: 2014-08-05
- Inventor: Sudip K. Mazumder
- Applicant: Sudip K. Mazumder
- Applicant Address: US IL Urbana
- Assignee: The Board of Trustees of the University of Illinois
- Current Assignee: The Board of Trustees of the University of Illinois
- Current Assignee Address: US IL Urbana
- Agency: Greer, Burns & Crain Ltd.
- Main IPC: H01L27/06
- IPC: H01L27/06

Abstract:
Preferred embodiments of the invention include a thyristor core that is single biased by a source, such as a power source (or a portion thereof) that is being switched through the thyristors. An optically activated transistor that is preferably a minority carrier device is in series with the thyristor core. The thyristor core has an optically activated gate. The turn-off of the thyristor can be accelerated by the turn-on (conduction state) of a gate switch, which ensures a unity gain turn-off of the core thyristor.
Public/Granted literature
- US20120098029A1 PHOTONICALLY-ACTIVATED SINGLE-BIASFAST-SWITCHING INTEGRATED THYRISTOR Public/Granted day:2012-04-26
Information query
IPC分类: