Invention Grant
US08796728B2 Photonically-activated single-bias fast-switching integrated thyristor 有权
光子激活单偏压快速开关集成晶闸管

Photonically-activated single-bias fast-switching integrated thyristor
Abstract:
Preferred embodiments of the invention include a thyristor core that is single biased by a source, such as a power source (or a portion thereof) that is being switched through the thyristors. An optically activated transistor that is preferably a minority carrier device is in series with the thyristor core. The thyristor core has an optically activated gate. The turn-off of the thyristor can be accelerated by the turn-on (conduction state) of a gate switch, which ensures a unity gain turn-off of the core thyristor.
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