Invention Grant
- Patent Title: Monolithic integration of group III nitride epitaxial layers
- Patent Title (中): III族氮化物外延层的整体积分
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Application No.: US13897038Application Date: 2013-05-17
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Publication No.: US08796736B1Publication Date: 2014-08-05
- Inventor: David F. Brown , Keisuke Shinohara , Miroslav Micovic , Andrea Corrion
- Applicant: HRL Laboratories, LLC
- Applicant Address: US CA Malibu
- Assignee: HRL Laboratories, LLC
- Current Assignee: HRL Laboratories, LLC
- Current Assignee Address: US CA Malibu
- Agency: Ladas & Parry
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A monolithically integrated device includes a substrate, a first set of Group III nitride epitaxial layers grown for a first HFET on a first region of the substrate, and a second set of Group III nitride epitaxial layers for a second HFET grown on a second region of the substrate.
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